- 您现在的位置：买卖IC网 > Sheet目录628 > MUBW35-06A6 (IXYS)MODULE IGBT CBI E1
MUBW35-06A6K
Input Rectifier Bridge D8 - D13
Symbol
Definitions
Conditions
Maximum Ratings
V RRM
max. repetitive reverse voltage
600
V
I FAV
I DAVM
I FSM
P tot
average forward current
max. average DC output current
max. surge forward current
total power dissipation
sine 80°
rectangular; d = / 3 ; bridge
t = 0 ms; sine 50 Hz
T C = 80°C
T C = 80°C
T C = 25°C
T C = 25°C
3
89
320
80
A
A
A
W
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V F
I R
R thJC
R thCH
forward voltage
reverse current
thermal resistance junction to case
thermal resistance case to heatsink
I F = 30 A
V R = V RRM
(per diode)
(per diode)
T VJ = 25°C
T VJ = 25°C
T VJ = 25°C
T VJ = 25°C
T VJ = 25°C
.0
.
0.4
0.45
.35
0.02
.4
V
V
mA
mA
K/W
K/W
Temperature Sensor NTC
Ratings
Symbol
R 25
B 25/85
Definitions
resistance
Conditions
T C = 25°C
min.
4.45
typ.
4.7
35 0
max.
5.0
Unit
k W
K
Module
Ratings
Symbol
Definitions
Conditions
min.
typ.
max.
Unit
T VJ
T VJM
T stg
V ISOL
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
I ISOL < mA; 50/60 Hz
-40
-40
25
50
25
2500
°C
°C
°C
V~
M d
d S
d A
mounting torque
creep distance on surface
strike distance through air
(M4)
2.0
2.7
2.7
2.2
Nm
mm
mm
Weight
Equivalent Circuits for Simulation
40
g
I
V 0
R 0
Ratings
Symbol
V 0
R 0
V 0
R 0
V 0
R 0
V 0
R 0
V 0
R 0
Definitions
rectifier diode
IGBT
free wheeling diode
IGBT
free wheeling diode
Conditions
D8 - D 3
T - T6
D - D6
T7
D7
T VJ = 25°C
T VJ = 25°C
T VJ = 25°C
T VJ = 25°C
T VJ = 25°C
min.
typ.
0.90
9
.0
4
.05
7
.0
70
.25
26
max.
Unit
V
m W
V
m W
V
m W
V
m W
V
m W
T C = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
? 2007 IXYS All rights reserved
2007 3a
4-5
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MUBW35-12A7
MODULE IGBT CBI E2
MUBW35-12A8
MODULE IGBT CBI E3
MUBW40-12T7
MODULE IGBT CBI E2
MUBW45-12T6K
MODULE IGBT CBI E1
MUBW50-06A7
MODULE IGBT CBI E2
MUBW50-06A8
MODULE IGBT CBI E3
MUBW50-12A8
MODULE IGBT CBI E3
MUBW50-12T8
MODULE IGBT CBI E3
相关代理商/技术参数
MUBW35-06A6K
功能描述:分立半导体模块 35 Amps 600V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MUBW35-12A7
功能描述:分立半导体模块 35 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MUBW35-12A8
功能描述:分立半导体模块 35 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MUBW35-12E7
功能描述:分立半导体模块 35 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MUBW40-12T7
功能描述:分立半导体模块 40 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MUBW4-12A6
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | COMPLEX BRIDGE | 1.2KV V(BR)CES | 3.6A I(C)
MUBW45-12T6K
功能描述:分立半导体模块 45 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MUBW50-06A7
功能描述:分立半导体模块 50 Amps 600V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: